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| Datasheet File OCR Text: |
| PROCESS Power Transistor NPN - Darlington Chip CP117 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 910 PRINCIPAL DEVICE TYPES 2N6043 2N6044 2N6045 2N6301 EPITAXIAL BASE 111 X 111 MILS 10 MILS 20 X 30 MILS 20 X 26 MILS Al - 30,000A Au/Cr/Ni/Au - Ni-6,000A, Au-6,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R6 (1 -August 2002) Central TM PROCESS CP117 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R6 (1 -August 2002) |
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